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Carrier transfer between V-grooved quantum wire and vertical quantum well

dc.contributor.authorLu, Weien_AU
dc.contributor.authorLiu, Qiu Xiangen_AU
dc.contributor.authorLi, Zhong Huien_AU
dc.contributor.authorShen, S Cen_AU
dc.contributor.authorZhao, Q Xen_AU
dc.contributor.authorFu, Yen_AU
dc.contributor.authorWillander, Men_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorCockayne, David John Hughen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-10T23:31:05Z
dc.date.issued2001
dc.date.updated2015-12-10T11:11:26Z
dc.description.abstractWe report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.
dc.identifier.issn0375-9601
dc.identifier.urihttp://hdl.handle.net/1885/68460
dc.publisherElsevier
dc.sourcePhysics Letters A
dc.subjectKeywords: aluminum; arsenic; gallium; article; geometry; luminescence; quantum chemistry; quantum mechanics; structure analysis; temperature dependence; temperature measurement
dc.titleCarrier transfer between V-grooved quantum wire and vertical quantum well
dc.typeJournal article
local.bibliographicCitation.lastpage80
local.bibliographicCitation.startpage77
local.contributor.affiliationLu, Wei, Chinese Academy of Sciences
local.contributor.affiliationLiu, Qiu Xiang, Guangdong University of Technology
local.contributor.affiliationLi, Zhong Hui, Hong Kong Baptist University
local.contributor.affiliationShen, S C, Fudan University
local.contributor.affiliationZhao, Q X, Gotenburg University
local.contributor.affiliationFu, Y, Gotenburg University
local.contributor.affiliationWillander, M, Gotenburg University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationCockayne, David John Hugh, University of Oxford
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1719
local.identifier.citationvolume280
local.identifier.doi10.1016/S0375-9601(01)00022-6
local.identifier.scopusID2-s2.0-0035847502
local.type.statusPublished Version

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