Effect of substrate proximity on luminescence yield from Si nanocrystals

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Sychugov, Ilya
Galeckas, Augustinas
Elfström, Niklas
Wilkinson, Andrew R.
Elliman, Robert G.
Linnros, Jan

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American Institute of Physics (AIP)

Abstract

The influence of the proximity of a high refractive index substrate on the luminescence of Si nanocrystals was investigated by time-integrated and time-resolved photoluminescence. The luminescence yield was found to be ∼2.5 times larger for emitters distanced from the substrate compared to those in proximity with the substrate, while luminescence decay measurements revealed only a slight increase in the luminescence lifetime (∼15%). Results are discussed in terms of local density of optical modes surrounding a pointlike light emitter with important implications for the collection efficiency of luminescence and the estimation of internal quantum efficiency for a quantum dot.

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Applied Physics Letters

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