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Phosphorus-diffused polysilicon contacts for solar cells

Yan, Di; Cuevas, Andres; Bullock, James; Wan, Yimao; Samundsett, Christian

Description

This paper describes the optimization of a technique to make polysilicon/SiO <inf>x</inf> contacts for silicon solar cells based on doping PECVD intrinsic polysilicon by means of a thermal POCl<inf>3</inf> diffusion process. Test structures are used to measure the recombination current density J<inf>oc</inf> and contact resistivity ρ <inf> c </inf> of the metal/n+ polysilicon/SiO <inf>x</inf> /silicon structures. The phosphorus diffusion temperature and time are optimized for a range of...[Show more]

dc.contributor.authorYan, Di
dc.contributor.authorCuevas, Andres
dc.contributor.authorBullock, James
dc.contributor.authorWan, Yimao
dc.contributor.authorSamundsett, Christian
dc.date.accessioned2016-02-24T22:40:30Z
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/1885/98344
dc.description.abstractThis paper describes the optimization of a technique to make polysilicon/SiO <inf>x</inf> contacts for silicon solar cells based on doping PECVD intrinsic polysilicon by means of a thermal POCl<inf>3</inf> diffusion process. Test structures are used to measure the recombination current density J<inf>oc</inf> and contact resistivity ρ <inf> c </inf> of the metal/n+ polysilicon/SiO <inf>x</inf> /silicon structures. The phosphorus diffusion temperature and time are optimized for a range of thicknesses of the SiO <inf>x</inf> and polysilicon layers. The oxide thickness is found to be critical to obtain a low contact resistivity ρ <inf> c </inf>, with an optimum of about 1.2nm for a thermal oxide and ~1.4nm for a chemical oxide. A low J <inf> oc </inf>≤5fA/cm2 has been obtained for polysilicon thicknesses in the range of 32nm-60nm, while ρ <inf> c </inf> increases from 0.016Ωcm2 to 0.070Ω-cm2 due to the bulk resistivity of polysilicon. These polysilicon/SiO <inf>x</inf> contacts have been applied to the rear of n-type silicon solar cells having a front boron diffusion, achieving V<inf>oc</inf> =674.6mV, FF=80.4% and efficiency=20.8%, which demonstrate the effectiveness of the techniques developed here to produce high performance solar cells.
dc.publisherElsevier
dc.sourceSolar Energy Materials and Solar Cells
dc.titlePhosphorus-diffused polysilicon contacts for solar cells
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume142
dc.date.issued2015
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor099900 - OTHER ENGINEERING
local.identifier.ariespublicationa383154xPUB2563
local.type.statusPublished Version
local.contributor.affiliationYan, Di, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationBullock, James, College of Engineering and Computer Science, ANU
local.contributor.affiliationWan, Yimao, College of Engineering and Computer Science, ANU
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage75
local.bibliographicCitation.lastpage82
local.identifier.doi10.1016/j.solmat.2015.06.001
dc.date.updated2016-02-24T08:06:08Z
local.identifier.scopusID2-s2.0-84931054100
CollectionsANU Research Publications

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