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Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

Li, Na; Lu, W; Liu, Qiuxiang; Yuan, Shu; Li, Zhi-Chang; Dou, H; Shen, S; Li, Ning

Description

We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93699
Source: Superlattices and Microstructures
DOI: 10.1006/spmi.1999.0785

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