Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors
Date
1999
Authors
Li, Na
Lu, W
Liu, Qiuxiang
Yuan, Shu
Li, Zhi-Chang
Dou, H
Shen, S
Li, Ning
Journal Title
Journal ISSN
Volume Title
Publisher
Academic Press
Abstract
We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing
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Keywords
Keywords: Charge carriers; Composition effects; Crystal atomic structure; Heterojunctions; Interdiffusion (solids); Ion implantation; Protons; Rapid thermal annealing; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells;
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Source
Superlattices and Microstructures
Type
Journal article
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Restricted until
2037-12-31
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