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Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon

Goldberg, Richard; Williams, James; Elliman, Robert

Description

Nucleation of an amorphous Si layer is shown to occur preferentially at a thin band of dislocations during self-ion-irradiation of silicon at elevated temperatures. This process occurs even when the defect band is well separated from the peak of the ion damage distribution. Without such a nucleation site, amorphization does not occur under identical bombardment conditions. These results suggest that amorphization can be nucleation limited under conditions where significant defect annealing...[Show more]

dc.contributor.authorGoldberg, Richard
dc.contributor.authorWilliams, James
dc.contributor.authorElliman, Robert
dc.date.accessioned2015-12-13T23:34:57Z
dc.date.available2015-12-13T23:34:57Z
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/1885/93687
dc.description.abstractNucleation of an amorphous Si layer is shown to occur preferentially at a thin band of dislocations during self-ion-irradiation of silicon at elevated temperatures. This process occurs even when the defect band is well separated from the peak of the ion damage distribution. Without such a nucleation site, amorphization does not occur under identical bombardment conditions. These results suggest that amorphization can be nucleation limited under conditions where significant defect annealing occurs during irradiation. This process can be understood if mobile, implantation-induced defects are trapped at preexisting damage and raise the local free energy above that of the amorphous phase.
dc.publisherAmerican Physical Society
dc.sourcePhysical Review Letters
dc.titlePreferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume82
dc.date.issued1999
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub25079
local.type.statusPublished Version
local.contributor.affiliationGoldberg, Richard, Columbia University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage771
local.bibliographicCitation.lastpage774
dc.date.updated2015-12-12T09:38:05Z
local.identifier.scopusID2-s2.0-0001305650
CollectionsANU Research Publications

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