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Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals

Choi, S; Elliman, Robert

Description

Reversible charging effects are observed in metal-insulator-semiconductor structures which have been ion implanted and annealed to produce Si nanocrystals in the insulating SiO2 layer. The shifts in current-voltage (I-V) and capacitance-voltage (C-V) curves are induced by forward constant voltage stress or UV light exposure, and can be explained by hole charging of the nanocrystals in the insulator layer. A reverse constant voltage stress is shown to recover the original I-V curve and partially...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93668
Source: Applied Physics Letters

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