Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals
Reversible charging effects are observed in metal-insulator-semiconductor structures which have been ion implanted and annealed to produce Si nanocrystals in the insulating SiO2 layer. The shifts in current-voltage (I-V) and capacitance-voltage (C-V) curves are induced by forward constant voltage stress or UV light exposure, and can be explained by hole charging of the nanocrystals in the insulator layer. A reverse constant voltage stress is shown to recover the original I-V curve and partially...[Show more]
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|Source:||Applied Physics Letters|
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