Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals
Description
Reversible charging effects are observed in metal-insulator-semiconductor structures which have been ion implanted and annealed to produce Si nanocrystals in the insulating SiO2 layer. The shifts in current-voltage (I-V) and capacitance-voltage (C-V) curves are induced by forward constant voltage stress or UV light exposure, and can be explained by hole charging of the nanocrystals in the insulator layer. A reverse constant voltage stress is shown to recover the original I-V curve and partially...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/93668 |
Source: | Applied Physics Letters |
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File | Description | Size | Format | Image |
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01_Choi_Reversible_Charging_Effects_in_1999.pdf | 404.07 kB | Adobe PDF | Request a copy |
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