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Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

Ridgway, Mark C; Glover, Christopher; Foran, Garry J; Yu, Kin Man

Description

Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93402
Source: Nuclear Instruments and Methods in Physics Research: Section B

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