Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Date
1999
Authors
Ridgway, Mark C
Glover, Christopher
Foran, Garry J
Yu, Kin Man
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.
Description
Keywords
Keywords: Amorphous gallium arsenide; Extended x ray absorption fine structure; Amorphization; Amorphous materials; Crystalline materials; Ion implantation; Semiconducting gallium arsenide; Stoichiometry; X ray spectroscopy; Crystal atomic structure Amorphous GaAs; EXAFS; Extended X-ray absorption fine structure; GaAs; Ion implantation
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31