Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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