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Atomic-level characterisation of ion-induced amorphisation in compound semiconductors

Ridgway, Mark C; Glover, Christopher; Bezakova, E; Byrne, Aidan; Foran, Garry J; Yu, Kin Man

dc.contributor.authorRidgway, Mark C
dc.contributor.authorGlover, Christopher
dc.contributor.authorBezakova, E
dc.contributor.authorByrne, Aidan
dc.contributor.authorForan, Garry J
dc.contributor.authorYu, Kin Man
dc.date.accessioned2015-12-13T23:34:18Z
dc.date.available2015-12-13T23:34:18Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93401
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.titleAtomic-level characterisation of ion-induced amorphisation in compound semiconductors
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolumeB148
dc.date.issued1999
local.identifier.absfor020401 - Condensed Matter Characterisation Technique Development
local.identifier.ariespublicationMigratedxPub24743
local.type.statusPublished Version
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBezakova, E, Royal Adelaide Hospital
local.contributor.affiliationByrne, Aidan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory
local.bibliographicCitation.startpage391
local.bibliographicCitation.lastpage395
dc.date.updated2015-12-12T09:35:28Z
CollectionsANU Research Publications

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