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Low Loss, Thin P-Clad 980 nm InGaAs Semiconductor Laser Diodes with Low Confinement, Asymmetric Structure
Low Loss, Thin P-Clad 980 nm InGaAs Semiconductor Laser Diodes with Low Confinement, Asymmetric Structure
Date
2002
Authors
Buda, Manuela
Hay, J
Jagadish, Chennupati
Tan, Hark Hoe
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http://hdl.handle.net/1885/91923
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Invention
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