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Low Loss, Thin P-Clad 980 nm InGaAs Semiconductor Laser Diodes with Low Confinement, Asymmetric Structure

dc.contributor.authorBuda, Manuela
dc.contributor.authorHay, J
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.coverage.spatialAustralia
dc.date.accessioned2015-12-13T23:23:47Z
dc.date.available2015-12-13T23:23:47Z
dc.identifier.urihttp://hdl.handle.net/1885/91923
dc.titleLow Loss, Thin P-Clad 980 nm InGaAs Semiconductor Laser Diodes with Low Confinement, Asymmetric Structure
dc.typeInvention
local.description.notesImported from ARIES
dc.date.issued2002
local.identifier.absfor020604 - Quantum Optics
local.identifier.ariespublicationMigratedxPub22844
local.type.statusPublished Version
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationHay, J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
dc.date.updated2015-12-12T09:17:38Z
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