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Photoluminescence in delta-doped InGaAs/GaAs single quantum wells

Dao, Lap Van; Gal, Michael; Li, Gang; Jagadish, Chennupati

Description

We have studied the time integrated (cw) and time resolved photoluminescence (PL) spectra of Si δ-doped In0.2Ga0.8As/GaAs quantum wells (QWs), in which the δ doping layer was either at the center of the quantum well or outside the well, in the barrier r

dc.contributor.authorDao, Lap Van
dc.contributor.authorGal, Michael
dc.contributor.authorLi, Gang
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2015-12-13T23:18:31Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/90216
dc.description.abstractWe have studied the time integrated (cw) and time resolved photoluminescence (PL) spectra of Si δ-doped In0.2Ga0.8As/GaAs quantum wells (QWs), in which the δ doping layer was either at the center of the quantum well or outside the well, in the barrier r
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.titlePhotoluminescence in delta-doped InGaAs/GaAs single quantum wells
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume87
dc.date.issued2000
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub20517
local.type.statusPublished Version
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.affiliationLi, Gang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage3896
local.bibliographicCitation.lastpage3899
dc.date.updated2015-12-12T08:57:10Z
local.identifier.scopusID2-s2.0-0000460086
CollectionsANU Research Publications

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