Redistribution of Boron in Silicon after Ne+ Postirradiation and Thermal Annealing
Date
2000
Authors
Fink, Dietmar
Szimkowiak, P
Hu, Xiao-Zhi
Ho, Joshua
Vacik, J
Chadderton, Lewis
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Gordon and Breach
Abstract
Silicon wafers were implanted with 200 keV B+ ions up to 5 × 1014 cm-2 fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500°C. The change in the boron dept
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Keywords
Keywords: Boron; Computer simulation; Furnace annealing; Implantation; Intersticialcy mechanism; Neon; Neutron depth profiling; Radiation enhanced diffusion; Range distributions; Silicon; Surface precipitation
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Radiation Effects and Defects in Solids
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Journal article
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Restricted until
2037-12-31
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