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Redistribution of Boron in Silicon after Ne+ Postirradiation and Thermal Annealing

Fink, Dietmar; Szimkowiak, P; Hu, Xiao-Zhi; Ho, Joshua; Vacik, J; Chadderton, Lewis


Silicon wafers were implanted with 200 keV B+ ions up to 5 × 1014 cm-2 fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500°C. The change in the boron dept

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Radiation Effects and Defects in Solids


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