Ion-Beam-Induced Porosity of GaN
Date
2000
Authors
Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Zou, Jin
Craig, Vincent
Li, Gang
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An import
Description
Keywords
Citation
Collections
Source
Applied Physics Letters
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31