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Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN

Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Li, Gang; Pearton, S J

Description

The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89277
Source: Applied Physics Letters

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