Skip navigation
Skip navigation

Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN

Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Li, Gang; Pearton, S J


The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
Source: Applied Physics Letters


File Description SizeFormat Image
01_Kucheyev_Strong_Surface_Disorder_and_2000.pdf398.64 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator