Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
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Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Li, Gang
Pearton, S J
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American Institute of Physics (AIP)
Abstract
The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the
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Applied Physics Letters
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2037-12-31
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