Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the
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|Source:||Applied Physics Letters|
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