Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
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Lloyd-Hughes, J; Castro-Camus, E; Fraser, Michael; Jagadish, Chennupati; Johnston, Michael B
Description
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to...[Show more]
Collections | ANU Research Publications |
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Date published: | 2004 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/86804 |
Source: | Physical Review B: Condensed Matter and Materials |
DOI: | 10.1117/12.644074 |
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