Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
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