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Carrier Dynamics in Ion-Implanted GaAs Studied by Simulation and Observation of Terahertz Emission

Lloyd-Hughes, J; Castro-Camus, E; Fraser, Michael; Jagadish, Chennupati; Johnston, Michael B


We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1117/12.644074


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