Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Date
2004
Authors
Deenapanray, Prakash
Krispin, M
Meyer, W E
Jagadish, Chennupati
Auret, Francois D
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Materials Research Society
Abstract
Impurity-free disordering (IFD) of GaAs and AlxGa 1-xAs epitaxial layers using SiOx capping in conjunction with annealing was studied by deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements. Three dominant electron traps S1
Description
Keywords
Keywords: Crystal defects; Crystal impurities; Dislocations (crystals); Electron emission; Epitaxial growth; Semiconducting aluminum compounds; Semiconductor doping; Spectroscopy; Defect engineering; Disordered layers; Impurity-free disordering (IFD); Semiconductin
Citation
Collections
Source
Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications
Type
Conference paper