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III-V compound semiconductor nanowires

Joyce, Hannah J; Paiman, Suriati; Gao, Qiang; Kim, Yong; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Zhang, Xin; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe


GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
Source: 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
DOI: 10.1109/NMDC.2009.5167572


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