III-V compound semiconductor nanowires
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or...[Show more]
|Collections||ANU Research Publications|
|Source:||2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009|
|01_Joyce_III-V_compound_semiconductor_2009.pdf||294.74 kB||Adobe PDF||Request a copy|
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