III-V compound semiconductor nanowires
Date
2009
Authors
Joyce, Hannah J
Paiman, Suriati
Gao, Qiang
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati
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IEEE
Abstract
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
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Keywords
Keywords: Au nanoparticle; Crystal qualities; Defect-free; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; MOCVD; Research activities; V/III ratio; Chemical vapor deposition; Crystal structure; Electric wire; Fluo III-V compound semiconductors; MOCVD; Nanowires
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2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Type
Conference paper
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2037-12-31
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