Shape control and emission wavelength extension of InP-based InAsSb nanostructures
Date
2010
Authors
Lei, Wen
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Conference Organising Committee
Abstract
This paper presents a study on the shape control and emission wavelength extension of InP-based InAsSb nanostructures. InGaAs buffer layer, combined with low growth temperature and medium V/III ratio, provides an effective approach to fabricate InAsSb QDs. By using InGaAsSb sandwich layer to serve as both strain reducing layer and metamorphic buffer layer, the emission wavelength of InAsSb QDs can be extended well beyond 2 μm, which is very useful for their application as mid-infrared emitters.
Description
Keywords
Keywords: Emission wavelength; InGaAsSb; InP; Low growth temperature; Metamorphic buffer layer; Mid-infrared emitters; Shape control; Strain reducing layers; V/III ratio; Buffer layers; Infrared devices; Nanostructures
Citation
Collections
Source
Materials Research Society Symposium Proceedings
Type
Conference paper