Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
Date
2010
Authors
Paiman, Suriati
Gao, Qiang
Joyce, Hannah J
Jagadish, Chennupati
Kim, Yong
Guo, Y.
Zou, Jin
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and
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Keywords
Keywords: Blue-shifted; Emission energies; Emission wavelength; Growth conditions; Growth parameters; InP; Metalorganic chemical vapor deposition; Microphotoluminescence; Temperature increase; Temperature range; V/III ratio; Wurtzites; Zinc-blende; Catalysis; Growt
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Type
Conference paper
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2037-12-31
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