Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Date

2010

Authors

Paiman, Suriati
Gao, Qiang
Joyce, Hannah J
Jagadish, Chennupati
Kim, Yong
Guo, Y.
Zou, Jin
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and

Description

Keywords

Keywords: Blue-shifted; Emission energies; Emission wavelength; Growth conditions; Growth parameters; InP; Metalorganic chemical vapor deposition; Microphotoluminescence; Temperature increase; Temperature range; V/III ratio; Wurtzites; Zinc-blende; Catalysis; Growt

Citation

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

Access Statement

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Restricted until

2037-12-31