Defect Acceptor and Donor in Ion-Bombarded GaN
Date
2005
Authors
Petravic, Mladen
Coleman, Victoria A
Kim, K J
Kim, Bongsoo
Li, Gang
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
We have employed synchrotron-based core level photoemission measurements and near-edge x-ray absorption fine structure spectroscopy to identify and characterize nitrogen interstitials in p -type GaN, created by nitrogen bombardment. From absorption measurements around the nitrogen K edge we have identified nitrogen interstitial levels within the band gap, in good agreement with theoretical predictions. The reduction in band bending determined from photoemission measurements was explained by the acceptor-like character of these defects. Argon bombardment produces nitrogen vacancies and the metallic Ga phase at the surface, which will produce the increased band bending and pinning of the surface Fermi level closer to the conduction band minimum.
Description
Keywords
Keywords: Absorption spectroscopy; Defects; Ion bombardment; Nitrogen; Photoemission; Synchrotrons; X ray analysis; Band gap; Conduction band; Interstitial levels; Photoemission measurements; Gallium nitride
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Source
Journal of Vacuum Science and Technology A
Type
Journal article