The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
MacDonald, Daniel; Deenapanray, Prakash; Cuevas, Andres; Diez, Stephan; Glunz, Stefan
Description
Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/81311 |
Source: | Solid State Phenomena |
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