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The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

MacDonald, Daniel; Deenapanray, Prakash; Cuevas, Andres; Diez, Stephan; Glunz, Stefan

Description

Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/81311
Source: Solid State Phenomena

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