The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains
|Collections||ANU Research Publications|
|Source:||Solid State Phenomena|
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