Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
Date
2005
Authors
Fu, Lan
Lever McGowan, Penelope
Jagadish, Chennupati
Reece, Peter
Gal, Michael
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures and annealing at different temperatures. In order to obtain large differential energy shifts for device integration using both methods, the essential issue of suppression of thermal interdiffusion using a TiO2 capping layer was also addressed.
Description
Keywords
Keywords: Deposition; Dosimetry; Impurities; Ion implantation; Optoelectronic devices; Semiconducting gallium arsenide; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Intermixing; Photonic integration; Thermal interdiffusion; Semiconductor quan
Citation
Collections
Source
IEE Proceedings - Circuits, Devices and Systems
Type
Journal article