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Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration

Fu, Lan; Lever McGowan, Penelope; Jagadish, Chennupati; Reece, Peter; Gal, Michael; Tan, Hark Hoe

Description

Two of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures...[Show more]

dc.contributor.authorFu, Lan
dc.contributor.authorLever McGowan, Penelope
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorReece, Peter
dc.contributor.authorGal, Michael
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:45:49Z
dc.date.available2015-12-13T22:45:49Z
dc.identifier.issn1350-2409
dc.identifier.urihttp://hdl.handle.net/1885/79969
dc.description.abstractTwo of the most important intermixing techniques, ion implantation and impurity free vacancy disordering, are investigated and compared in InGaAs/(Al)GaAs quantum well (QW) and quantum dot (QD) structures. For ion implantation induced intermixing, arsenic implantation was performed and the amount of interdiffusion created was found to vary as a function of implantation dose and temperature. Impurity free vacancy disordering was also enhanced by deposition of SiO2 in both QW and QD structures and annealing at different temperatures. In order to obtain large differential energy shifts for device integration using both methods, the essential issue of suppression of thermal interdiffusion using a TiO2 capping layer was also addressed.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.sourceIEE Proceedings - Circuits, Devices and Systems
dc.subjectKeywords: Deposition; Dosimetry; Impurities; Ion implantation; Optoelectronic devices; Semiconducting gallium arsenide; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Intermixing; Photonic integration; Thermal interdiffusion; Semiconductor quan
dc.titleStudy of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume152
dc.date.issued2005
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub8318
local.type.statusPublished Version
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationReece, Peter, University of New South Wales
local.contributor.affiliationGal, Michael, University of New South Wales
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage491
local.bibliographicCitation.lastpage496
local.identifier.doi10.1049/ip-cds:20045053
dc.date.updated2015-12-11T10:25:22Z
local.identifier.scopusID2-s2.0-27544455783
CollectionsANU Research Publications

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