Deep Dry-etch of Silica in a Helicon Plasma Etcher for Optical Waveguide Fabrication
Dry-etch of SiO2 layers using a CF4 plasma in a helicon plasma etcher for optical waveguide fabrication has been studied. Al2O3 thin films, instead of the conventional materials, such as Cr or photoresist, were employed as the masking materials. The Al2O3 mask layer was obtained by periodically oxidizing the surface of an Al mask in an oxygen plasma during the breaks of the SiO2 etching process. A relatively high SiO2/Al2O3 etching selectivity of ∼100:1, compared with a SiO2/Al selectivity of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science and Technology A|
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