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Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP

Carmody, C; Jagadish, Chennupati; Douheret, O; Maknys, K; Anand, S; Zou, Jin; Dao, Lap Van; Gal, Michael; Tan, Hark Hoe


The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM)....[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1633349


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