Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP

Abstract

The ion implanted semi-insulating InP was analyzed at increased annealing temperature for its structural, electrical and optical properties. The damage from the implantations was predicted using transport of ions in matter (TRIM) simulations. To obtain the electrical characterstics, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used.The density of defects after the implantations was confirmed by X-ray and transmission electron microscopy (TEM). Analysis show that the amount and type of damage caused by implantation did not scale with implant ion atomic mass. Show more