Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]
Date
2013
Authors
Russo-Averchi, E.
Dalmau-Malloriqui, A
Canales-Mundet, I
Tutuncuoglu, G
Alarcon-Llado, Esther
Heiss, M.
Ruffer, D
Conesa-Boj, Sonia
Caroff, Philippe
Fontcuberta i Morral, Anna
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics Publishing
Abstract
Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering pro
Description
Keywords
Keywords: Competitive growth; Growth conditions; Growth mechanisms; High aspect ratio; Organized growth; Rational design; Scattering property; Substrate temperature; Growth temperature; Nanowires; Semiconductor quantum dots; Silicon; Substrates; Aspect ratio
Citation
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Source
Nanotechnology
Type
Journal article
Book Title
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Restricted until
2037-12-31