Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|01_Chan_Effects_of_high_temperature_2014.pdf||1.02 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.