Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO
Date
2014
Authors
Chan, Keng
Ton-That, Cuong
Vines, Lasse
Choi, Sumin
Phillips, Matthew R
Svensson, Bengt Gunnar
Jagadish, Chennupati
Wong-Leung, Jennifer
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Institute of Physics Publishing
Abstract
The evolution of luminescence properties and voids formation with respect to annealing temperature in H implanted ZnO was investigated by depth-resolved cathodoluminescence spectroscopy (DRCLS), transmission electron microscopy and secondary ion mass spectrometry (SIMS). The annealing temperature is found to induce noticeable changes to the shape, size and empty volume density of the cavities. DRCLS results also reveal that the green emission is influenced by different annealing temperatures. In particular, the 600 °C anneal produces a strong quenching of the green emission in the implanted region, while after the 800 °C anneal a significant enhancement near the surface is observed. The annealing at 600 °C also results in an uncommon violet emission at ∼3.1 eV that is not observed after a higher annealing temperature. A clear correlation between the violet emission, vacancies and Li is revealed from comparison between the DRCLS intensities and SIMS data.
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Journal of Physics D: Applied Physics
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Journal article
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2037-12-31
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