Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111} B by metal-organic chemical vapor deposition
Date
2013
Authors
Sun, W
Guo, YaNan
Xu, Hong-Yi
Liao, Zhi-Ming
Gao, Qiang
Jagadish, Chennupati
Zou, Jin
Tan, Hark Hoe
Journal Title
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Volume Title
Publisher
American Chemical Society
Abstract
In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously gr
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Keywords
Keywords: Compositional control; GaAs; GaAs substrates; Metal-organic; Misfit strains; P-distribution; Planar layers; Precursor decomposition; Epitaxial growth; Gallium arsenide; Metallorganic chemical vapor deposition; Nanowires
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Source
Journal of Physical Chemistry C
Type
Journal article
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Restricted until
2037-12-31
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