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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111} B by metal-organic chemical vapor deposition

Sun, W; Guo, YaNan; Xu, Hong-Yi; Liao, Zhi-Ming; Gao, Qiang; Jagadish, Chennupati; Zou, Jin; Tan, Hark Hoe

Description

In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously gr

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/74886
Source: Journal of Physical Chemistry C
DOI: 10.1021/jp406294t

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