Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films
Date
2014
Authors
Li, Junjian
Wang, Guoxiang
Li, Jun
Shen, Xiang
Chen, Yimin
Wang, Rongping
Xu, Tiefeng
Nie, Qiuhua
Dai, Shixun
Lu, Yegang
Journal Title
Journal ISSN
Volume Title
Publisher
Royal Society of Chemistry
Abstract
We prepared Mg-doped Sb2Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb2Te. Compared to Ge 2Sb2Te5, the optimal composition of Mg 21.5(Sb2Te)78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state at ~121 °C for ten years), indicating improved amorphous state stability due to the formation of Mg-Sb bonds. A reversible, repetitive optical switching behavior was realized in the Mg21.5(Sb2Te) 78.5 film, with a fast crystallization speed of 52 ns and a low amorphization power of 35 mW. This journal is
Description
Keywords
Citation
Collections
Source
CrystEngComm
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description