Li, Junjian; Wang, Guoxiang; Li, Jun; Shen, Xiang; Chen, Yimin; Wang, Rongping; Xu, Tiefeng; Nie, Qiuhua; Dai, Shixun; Lu, Yegang; Wang, Xunsi
We prepared Mg-doped Sb2Te films and investigated their structural, optical and electrical properties. It was found that Mg doping can increase the crystallization temperature, suppress the crystal growth and shorten the crystallization time of Sb2Te. Compared to Ge 2Sb2Te5, the optimal composition of Mg 21.5(Sb2Te)78.5 exhibited a higher crystallization temperature (~183 °C), larger crystallization activation energy (~3.86 eV), and better data retention ability (maintaining the amorphous state...[Show more]
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