Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications
This brief review focuses on defect and microstructural issues of importance for applications of ion irradiation of semiconductors. Ion irradiation of semiconductors can lead to a variety of disordering behaviour that depends not only on the semiconductor material but also on implantation parameters such as ion fluence, flux, energy and mass as well as the implantation temperature. In some cases, such as silicon implanted at or below room temperature, ion disorder leads readily to...[Show more]
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