Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
Date
2007-01-24
Authors
Jellett, Wendy Elizabeth
Weber, K.J
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American Institute of Physics
Abstract
The authors report a simple technique to determine the surface recombination velocity of silicon and other semiconductor surfaces which have been passivated with a dielectric layer, as a function of charge density. A metal-oxide-semiconductor structure, employing large area, partially transparent metal contacts, is used to enable the charging of the surfaces. Simultaneous measurement of the emitter saturation current density Jœ and the effective instantaneous lifetime τinst allows accurate extraction of the effective surface recombination velocity Seff at any given injection level. Extremely low Jœ values of 1.8 fA cm-2 are measured on the silicon-silicon oxide (Si–SiO2) interface of a thermally oxidized, charged wafer.
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Keywords
silicon compounds, silicon, elemental semiconductors, MIS structures, surface recombination, surface charging, charge injection, current density, carrier lifetime
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Applied Physics Letters 90.4 (2007): 042104/1-3
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Journal article
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