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On Quantifying the Group-V to Group-III Interdiffusion Rates in In x Ga 1-x As/InP Quantum Wells

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Gareso, Paulus; Buda, Manuela; Jagadish, Chennupati; Ilyas, S; Gal, Michael; Tan, Hark Hoe

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The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation has been investigated using differential reflectance (DR), photoluminescence (PL) and theoretical modelling. Based on DR, PL and modelling results, we found the unique value of k (LV/LIII) ratio for three different InGaAs quantum well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS...[Show more]

dc.contributor.authorGareso, Paulus
dc.contributor.authorBuda, Manuela
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorIlyas, S
dc.contributor.authorGal, Michael
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:22:45Z
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/1885/72401
dc.description.abstractThe interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation has been investigated using differential reflectance (DR), photoluminescence (PL) and theoretical modelling. Based on DR, PL and modelling results, we found the unique value of k (LV/LIII) ratio for three different InGaAs quantum well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS was 1.05, 1.25 and 1.40 respectively. These ratios were slightly higher than unity indicating that the diffusion coefficient of the group-V sublattice was larger than that of the diffusion coefficient of the group-III sublattice. Change in the interdiffusion rate of group V and group III in the lattice-matched and strained (TS, CS) quantum well structures was most likely due to the different strain profile developed in the quantum well region as a result of changing the quantum well composition.
dc.publisherInstitute of Physics Publishing
dc.sourceSemiconductor Science and Technology
dc.subjectKeywords: Composition; Computer simulation; Crystal lattices; Interdiffusion (solids); Photoluminescence; Protons; Semiconducting indium gallium arsenide; Compressively strained (CS); Interdiffusion rates; Proton implantation; Sublattice atoms; Tensile strained (TS
dc.titleOn Quantifying the Group-V to Group-III Interdiffusion Rates in In x Ga 1-x As/InP Quantum Wells
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume21
dc.date.issued2006
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationMigratedxPub3227
local.type.statusPublished Version
local.contributor.affiliationGareso, Paulus, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationIlyas, S, University of New South Wales
local.contributor.affiliationGal, Michael, University of New South Wales
local.description.embargo2037-12-31
local.bibliographicCitation.startpage829
local.bibliographicCitation.lastpage832
local.identifier.doi10.1088/0268-1242/21/6/022
dc.date.updated2015-12-11T07:58:42Z
local.identifier.scopusID2-s2.0-33646725710
CollectionsANU Research Publications

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