Secondary electron microscopy dopant contrast image (SEMDCI) for laser doping
Laser doping has been the subject of intense research over the past decade, due to its potential to enable high-efficiency, low-cost silicon solar cell fabrication. Information about the doping profile that is created by the process is critical for process optimization but is generally difficult to obtain. We apply the technique of secondary electron image (SEI) contrast to the characterization of the cross sections of laser-doped lines. We demonstrate that this technique can be used for a...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
|01_Xu_Secondary_electron_microscopy_2013.pdf||986.73 kB||Adobe PDF||Request a copy|
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