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Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Tao, Zhikou; Zhang, R.; Xiu, XiangQian; Cui, Xugao; Li, Li (Lily); Li, Xin; Xie, ZiLi; Zheng, Youdou; Zheng, Rongkun; Ringer, Simon P.

Description

We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3N clusters are observed with Fe 3N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/71328
Source: Journal of Semiconductors (previously Chinese Journal of Semiconductors)
DOI: 10.1088/1674-4926/33/7/073002

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