Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
Tao, Zhikou; Zhang, R.; Xiu, XiangQian; Cui, Xugao; Li, Li (Lily); Li, Xin; Xie, ZiLi; Zheng, Youdou; Zheng, Rongkun; Ringer, Simon P.
We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3N clusters are observed with Fe 3N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn...[Show more]
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|Source:||Journal of Semiconductors (previously Chinese Journal of Semiconductors)|
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