Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory
Date
2012
Authors
Wang, Guoxiang
Shen, Xiang
Nie, Qiuhua
Wang, Rongping
Wu, Liangcai
Lv, Yegang
Chen, Fen
Fu, Jing
Dai, Shixun
Li, Jun
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Publisher
Institute of Physics Publishing
Abstract
Al x(Ge 2Sb 2Te 5) 100-x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge 2Sb 2Te 5 (GST) films show better thermal stability than GST because they do not have
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Keywords: Al content; Annealing temperatures; Crystalline phasis; Crystallization process; Face-centred cubic; Local bonding; On/off ratio; Orders of magnitude; Phase-change random access memory; Threshold currents; Crystalline materials; Electric properties; Germa
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Source
Journal of Physics D: Applied Physics
Type
Journal article
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2037-12-31
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