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Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory

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Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua; Wang, Rongping; Wu, Liangcai; Lv, Yegang; Chen, Fen; Fu, Jing; Dai, Shixun; Li, Jun

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Al x(Ge 2Sb 2Te 5) 100-x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge 2Sb 2Te 5 (GST) films show better thermal stability than GST because they do not have

dc.contributor.authorWang, Guoxiang
dc.contributor.authorShen, Xiang
dc.contributor.authorNie, Qiuhua
dc.contributor.authorWang, Rongping
dc.contributor.authorWu, Liangcai
dc.contributor.authorLv, Yegang
dc.contributor.authorChen, Fen
dc.contributor.authorFu, Jing
dc.contributor.authorDai, Shixun
dc.contributor.authorLi, Jun
dc.date.accessioned2015-12-13T22:17:13Z
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/1885/71034
dc.description.abstractAl x(Ge 2Sb 2Te 5) 100-x materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge 2Sb 2Te 5 (GST) films show better thermal stability than GST because they do not have
dc.publisherInstitute of Physics Publishing
dc.sourceJournal of Physics D: Applied Physics
dc.subjectKeywords: Al content; Annealing temperatures; Crystalline phasis; Crystallization process; Face-centred cubic; Local bonding; On/off ratio; Orders of magnitude; Phase-change random access memory; Threshold currents; Crystalline materials; Electric properties; Germa
dc.titleImproved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume45
dc.date.issued2012
local.identifier.absfor020500 - OPTICAL PHYSICS
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationf5625xPUB2523
local.type.statusPublished Version
local.contributor.affiliationWang, Guoxiang, Ningbo University
local.contributor.affiliationShen, Xiang, Ningbo University
local.contributor.affiliationNie, Qiuhua, Ningbo University
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWu, Liangcai, Chinese Academy of Sciences
local.contributor.affiliationLv, Yegang, Chinese Academy of Sciences
local.contributor.affiliationChen, Fen, Ningbo University
local.contributor.affiliationFu, Jing, Ningbo University
local.contributor.affiliationDai, Shixun, Ningbo University
local.contributor.affiliationLi, Jun, Ningbo University
local.description.embargo2037-12-31
local.bibliographicCitation.issue37
local.identifier.doi10.1088/0022-3727/45/37/375302
dc.date.updated2016-02-24T09:00:06Z
local.identifier.scopusID2-s2.0-84865972283
local.identifier.thomsonID000308798200008
CollectionsANU Research Publications

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