Method of analyzing silicon groove damage using QSS-PC, PL imaging, silicon etch rate, and visual microscopy for solar cell fabrication
Date
2011
Authors
Fong, Kean
Blakers, Andrew
Journal Title
Journal ISSN
Volume Title
Publisher
John Wiley & Sons Inc
Abstract
This work uses a variety of tools to investigate damage caused by laser and dicing saw grooving in silicon. The tools comprise quasi steady state photoconductance decay, photoluminescence imaging, measurement of silicon etch rate in anisotropic etch solution, and visual microscopy. Shallow grooves were formed using a 532 nm Q-switched Nd:YLF frequency doubled solid state laser and a high speed spindle dicing saw. Combined analysis of the characterization tools enabled determination of the damage radius of the grooves within the bulk of the wafer, the radius of damage in the dielectric layer laterally along the surface of the wafer, as well as the groove etching requirements to fully recover the minority carrier lifetime in the vicinity of the groove.
Description
Keywords
Keywords: Anisotropic etch; Combined analysis; Damage; Dicing; Dicing saw; Dielectric layer; Etch rates; Groove etching; High-speed spindle; Minority carrier lifetimes; Photoluminescence imaging; Q-switched; Quasi-steady state photoconductance decays; Solar cell fa Damage; Dicing; Laser; Photoluminescence; Silicon; Solar cell
Citation
Collections
Source
Progress in Photovoltaics: Research and Applications
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31
Downloads
File
Description