Skip navigation
Skip navigation

Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

Forster, Maxime; Rougieux, Fiacre; Cuevas, Andres; Dehestru, B; Thomas, A; Fourmond, E; Lemiti, M


In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room temperature are shown to be the majority-dopant concentration, its ionization energy and type, and the compensation level. We show that both the majority-and the minority-carrier...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2012.2210032


File Description SizeFormat Image
01_Forster_Incomplete_ionization_and_2013.pdf520.22 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator