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Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

Forster, Maxime; Rougieux, Fiacre; Cuevas, Andres; Dehestru, B; Thomas, A; Fourmond, E; Lemiti, M

Description

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room temperature are shown to be the majority-dopant concentration, its ionization energy and type, and the compensation level. We show that both the majority-and the minority-carrier...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/69903
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2012.2210032

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