Forster, Maxime; Rougieux, Fiacre; Cuevas, Andres; Dehestru, B; Thomas, A; Fourmond, E; Lemiti, M
In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room temperature are shown to be the majority-dopant concentration, its ionization energy and type, and the compensation level. We show that both the majority-and the minority-carrier...[Show more]
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