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Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level

Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel; Cuevas, Andres


Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2013.2294755


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