Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level
Date
2014
Authors
Zheng, Peiting
Rougieux, Fiacre
MacDonald, Daniel
Cuevas, Andres
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IEEE Electron Devices Society
Abstract
Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to Klaassen's and Dorkel-Leturcq's mobility models in a range of temperatures.
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IEEE Journal of Photovoltaics
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Journal article
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2037-12-31
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