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Crystallization characteristics of Mg-doped Ge2Sb 2Te5 films for phase change memory applications

Fu, Jing; Shen, Xiang; Nie, Qiuhua; Wang, Guoxiang; Wu, Liangcai; Dai, Shixun; Xu, Tiefeng; Wang, Rongping


Mg-doped Ge2Sb2Te5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2012.09.181


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