Fu, Jing; Shen, Xiang; Nie, Qiuhua; Wang, Guoxiang; Wu, Liangcai; Dai, Shixun; Xu, Tiefeng; Wang, Rongping
Mg-doped Ge2Sb2Te5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On...[Show more]
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