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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Mailoa, Jonathan P; Akey, Austin J; Simmons, Christie B; Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Recht, Daniel; Winkler, Mark T; Williams, James; Warrender, Jeffrey M.; Persans, Peter D; Aziz, Michael; Buonassisi, Tonio

Description

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/68750
Source: Nature Communications
DOI: 10.1038/ncomms4011

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