Fabrication and resistance-switching behaviors of NiO thin films by thermal oxidation of evaporated Ni films
Date
2009
Authors
Cao, Xun
Li, Xiaomin
Yu, Weidong
Yang, Rui
Liu, Xinjun
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications
Abstract
Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.
Description
Keywords
Keywords: Conducting filament; Ni films; NiO; NiO thin film; On state current; On-state resistance; Polycrystalline; Pt(111); Resistance switching; Resistive switching; Si substrates; Switching behaviors; Thermal oxidation; Filaments (lamp); Oxidation; Platinum; Sw Evaporation; NiO; Resistance switching; Thermal oxidation
Citation
Collections
Source
Advanced Materials Research
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
10.4028/www.scientific.net/AMR.66.131
Restricted until
2037-12-31