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Influence of implantation damage on emitter recombination

Ratcliff, Thomas; Shalav, Avi; Fong, Kean; Elliman, Robert; Blakers, Andrew

Description

In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/61711
Source: Energy Procedia
DOI: 10.1016/j.egypro.2014.08.080

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