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The effect of annealing ambient on carrier recombination in boron implanted silicon

Ratcliff, Thomas; Fong, Kean; Shalav, Avi; Elliman, Robert; Blakers, Andrew

Description

The selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron-hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm-2 to

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/61699
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201409295

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