The effect of annealing ambient on carrier recombination in boron implanted silicon
Date
2014
Authors
Ratcliff, Thomas
Fong, Kean
Shalav, Avi
Elliman, Robert
Blakers, Andrew
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Wiley-VCH Verlag GMBH
Abstract
The selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron-hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm-2 to
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Physica Status Solidi: Rapid Research Letters
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Journal article
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2037-12-31
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