The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
Date
2011
Authors
Jolley, Greg
Lu, Hao Feng
Fu, Lan
Rao Tatavarti, Sudersena
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.
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Keywords
Keywords: Current properties; GaAs; GaAs solar cells; InGaAs quantum dots; Physical process; Quantum dot solar cells; Single junction; Spectral response characteristics; Temperature dependent; Gallium arsenide; Open circuit voltage; Photovoltaic effects; Semiconduc
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Source
Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)
Type
Conference paper
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Restricted until
2037-12-31
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