Drop epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Date
2012
Authors
Lei, Wen
Parkinson, Patrick
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.
Description
Keywords
Keywords: Controlled size; Crystallization process; Droplet epitaxy; Growth conditions; Infrared photodetector; Optoelectronic applications; Quantum-information processing; Strain-free; Drops; Epitaxial growth; Gallium; Microelectronics; Optical properties; Molecul
Citation
Collections
Source
COMMAD 2012 Proceedings
Type
Conference paper
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description