Skip navigation
Skip navigation

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

Elliman, Robert; Nawaz (Saleh), Muhammad; Venkatachalam, Dinesh; Kim, Tae-Hyun; Belay, Kidane; Karouta, Fouad

Description

We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/59902
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472390

Download

File Description SizeFormat Image
01_Elliman_Resistive_Switching_on_High-K_2012.pdf392.29 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator