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Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

Elliman, Robert; Nawaz (Saleh), Muhammad; Venkatachalam, Dinesh; Kim, Tae-Hyun; Belay, Kidane; Karouta, Fouad


We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472390


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