Optoelectronic properties of GaAs nanowire photodector
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Wang_Optoelectronic_properties_of_2012.pdf||244.41 kB||Adobe PDF||Request a copy|
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