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Optoelectronic properties of GaAs nanowire photodector

Wang, Hao; Parkinson, Patrick; Tian, Jie; Saxena, Dhruv; Mokkapati, Sudha; Gao, Qiang; Prasai, Prakash; Fu, Lan; Karouta, Fouad; Jagadish, Chennupati; Tan, Hark Hoe

Description

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/59855
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472399

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