Optoelectronic properties of GaAs nanowire photodector
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Altmetric Citations
Wang, Hao; Parkinson, Patrick; Tian, Jie; Saxena, Dhruv; Mokkapati, Sudha; Gao, Qiang; Prasai, Prakash; Fu, Lan; Karouta, Fouad; Jagadish, Chennupati; Tan, Hark Hoe
Description
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/59855 |
Source: | COMMAD 2012 Proceedings |
DOI: | 10.1109/COMMAD.2012.6472399 |
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