Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer

Date

2012

Authors

Vines, Lasse
Neuvonen, P.T.
Kuznetsov, A Yu
Wong-Leung, Jennifer
Jagadish, Chennupati
Svensson, Bengt Gunnar

Journal Title

Journal ISSN

Volume Title

Publisher

Materials Research Society

Abstract

Potassium (K) ions have been implanted in hydrothermally grown ZnO to a dose of 1 × 1015 cm-2, followed by isochronal annealing in a tube furnace (30min) and by rapid thermal annealing (30s) on two separate samples. For annealing temperatures below 700°

Description

Keywords

Keywords: Annealing temperatures; Annealing treatments; Anomalous diffusion; Implanted region; Intrinsic defects; Isochronal annealing; Projected range; Zn-interstitial; Rapid thermal annealing; Semiconductor growth; Zinc; Zinc oxide; Lithium

Citation

URI

http://hdl.handle.net/1885/58743

Collections

ANU Research Publications

Source

Materials Research Society Symposium Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1557/opl.2012.529

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