Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer
Date
2012
Authors
Vines, Lasse
Neuvonen, P.T.
Kuznetsov, A Yu
Wong-Leung, Jennifer
Jagadish, Chennupati
Svensson, Bengt Gunnar
Journal Title
Journal ISSN
Volume Title
Publisher
Materials Research Society
Abstract
Potassium (K) ions have been implanted in hydrothermally grown ZnO to a dose of 1 × 1015 cm-2, followed by isochronal annealing in a tube furnace (30min) and by rapid thermal annealing (30s) on two separate samples. For annealing temperatures below 700°
Description
Keywords
Keywords: Annealing temperatures; Annealing treatments; Anomalous diffusion; Implanted region; Intrinsic defects; Isochronal annealing; Projected range; Zn-interstitial; Rapid thermal annealing; Semiconductor growth; Zinc; Zinc oxide; Lithium
Citation
Collections
Source
Materials Research Society Symposium Proceedings
Type
Conference paper