The effect of exposure of Si-Si02 structure to atomic H by PECVD reactor
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of additional, recombination active defects. These defects are not thermally stable and are removed...[Show more]
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|Source:||Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)|
|01_Zhang_The_effect_of_exposure_of_2009.pdf||944.35 kB||Adobe PDF||Request a copy|
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