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Damp-heat degradation and repair of oxide-passivated silicon

McIntosh, Keith; DAI, Xi

Description

SiO2-passivated Si degrades when exposed to a 'damp-heat' atmosphere of 85% relative humidity and 85 °C. We find the effective surface recombination velocity at the SiO2/Si interface of phosphorus-diffused (111) Si to increase from 2200 to 11 000 cm/s af

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/56178
Source: Physica Status Solidi A
DOI: 10.1002/pssa.201026492

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