Damp-heat degradation and repair of oxide-passivated silicon
Date
2011
Authors
McIntosh, Keith
DAI, Xi
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Publisher
Wiley Interscience
Abstract
SiO2-passivated Si degrades when exposed to a 'damp-heat' atmosphere of 85% relative humidity and 85 °C. We find the effective surface recombination velocity at the SiO2/Si interface of phosphorus-diffused (111) Si to increase from 2200 to 11 000 cm/s af
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Keywords
Keywords: Damp-heat exposure; Front surfaces; High-efficiency solar cells; Reliability testing; SiO 2 ; Surface recombination velocities; Degradation; Experiments; Passivation; Phosphorus; Silicon; Silicon compounds; Surface testing; Silicon oxides degradation; humidity; passivation; silicon; SiO 2
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Source
Physica Status Solidi A
Type
Journal article
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Restricted until
2037-12-31
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