Modification of sidewall roughness in silica deep etching and its influence on coupling loss in hybrid integration
The objective of this study was to find the relationship between process parameters and responses in deep silica etching for hybrid integration. The process parameters were the wafer temperature, oxygen addition, clamp material and process pressure. The responses to these parameters were sidewall roughness, profile of etched waveguide, the morphology of etched surface and critical dimension change. When the process parameters were varied, the change in responses could be interpreted by...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings Vol. 4944 Integrated Optical Devices: Fabrication and Testing|
|01_Choi_Modification_of_sidewall_2003.pdf||2.64 MB||Adobe PDF||Request a copy|
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