Reactive ion etched black silicon texturing: A comparative study
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Allen, Thomas; Bullock, James; Cuevas, Andres; Baker-Finch, Simeon; Karouta, Fouad
Description
We report on significant progress towards the application of reactive ion etched (RIE) black silicon (b-Si) as an alternative to the most commonly applied front-side textures utilized in the crystalline silicon photovoltaics industry - random pyramids and isotexture. The as-etched b-Si surface displays approximately 1% front side reflectance weighted across the solar spectrum, outperforming both random pyramids (2.83%) and isotexture (6.06%) with optimized anti-reflection coatings. The b-Si...[Show more]
Collections | ANU Research Publications |
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Date published: | 2014 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/54509 |
Source: | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
DOI: | 10.1109/PVSC.2014.6924983 |
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File | Description | Size | Format | Image |
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01_Allen_Reactive_ion_etched_black_2014.pdf | 1.68 MB | Adobe PDF | Request a copy | |
02_Allen_Reactive_ion_etched_black_2014.pdf | 161.38 kB | Adobe PDF | Request a copy |
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